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Complex Transistors_2
瀏覽量：859 上傳更新：2020-07-06
Complex Transistors_2
Complex Transistors


Complex  Bipolar Transistors[ MOSFET ＋ BIP TR ] ／ [ BIP TR ＋ MOSFET ]


         Configuration

Package

EMT6
(SC-107C)

UMT6
(SC-88)
<SOT-363>

TSMT8

VCEO(V)

IC(A)

hFE*2

RoHS

Application

 

 

 

BIP_PNP+MOS_Nch

Power    Manegement

EMF6

UMF6N

-

-12
30

-0.5

270～680

Yes

BIP_NPN+MOS_Nch

Power    Manegement

EMF9

UMF9N

-

12
30

0.5

270～680

Yes

BIP_PNP+MOS_Pch

Load switch
         Switching

-

-

QS8F2

-30
-12

-2

270～680

Yes

* No.1 Pin is  located on the lower left of equivalent circuite diagram for  VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
     * No.1 Pin is located on the lower right of equivalent  circuite diagram for SMT5 and SMT6 packages.
     "MOSFET" might cause chip aging and breakdown  under the large electrified environment. Please consider to design with ESD  protection circuit.

Complex  Bipolar Transistors[ BIP TR ＋ DTR ] ／ [ DTR ＋ BIP TR ]


         Configuration

Package

EMT6
(SC-107C)

UMT6
(SC-88)
<SOT-363>

VCEO(V)

IC(A)

hFE*2

RoHS

Application

 

 

BIP_PNP+DTR_NPN

Power    Manegement

-

UMF28N

-50
50

-0.15

180～390

Yes

EMF5

UMF5N

-12
50

-0.5

270～680

Yes

BIP_NPN+DTR_NPN

Power    Manegement

EMF8

UMF8N

12
50

0.5

270～680

Yes

* No.1 Pin is  located on the lower left of equivalent circuite diagram for  VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
   * No.1 Pin is located on the lower right of equivalent  circuite diagram for SMT5 and SMT6 packages.

Complex  Bipolar Transistors[ BIP TR + Diode ] / [ Diode + BIP TR ]


         Configuration

Package

EMT6
(SC-107C)

UMT5
(SC-88A)
<SOT-353>

UMT6
(SC-88)
<SOT-363>

SMT5
(SC-74A)

TUMT5

TSMT5

VCEO(V)

IC(A)

hFE*2

RoHS

Application

 

 

 

 

 

BIP_PNP+Di

DC-DC Converter

-

UML1N

-

-

-

-50

-0.15

120～560

Yes

-

UML4N

-

-

-

-12

-0.5

270～680

Yes

-

-

FML9

-

-

-12

-1.5

270～680

Yes

-

-

-

-

QSL11

-30

-1

270～680

Yes

-

-

-

US5L9

QSL9

-12

-1.5

270～680

Yes

BIP_NPN+Di

DC-DC    Converter

-

UML2N

-

-

-

50

0.15

120～560

Yes

-

UML6N

-

-

-

12

0.5

270～680

Yes

-

-

FML10

-

-

12

1.5

270～680

Yes

-

-

-

US5L12

QSL12

30

1

270～680

Yes

-

-

-

US5L10

QSL10

12

1.5

270～680

Yes

Shunt    Regulator

EML22

UML23N

-

-

-

50
Vz
6.8

0.15
Iz
5

120～270

Yes

* No.1 Pin is  located on the lower left of equivalent circuite diagram for  VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
   * No.1 Pin is located on the lower right of equivalent  circuite diagram for SMT5 and SMT6 packages.

Complex  Bipolar Transistors[ MOSFET + DTR ] / [ DTR + MOSFET ]


         Configuration

Package

EMT6

(SC-107C)

UMT6

(SC-88)

<SOT-363>

VCEO(V)

IC(A)

hFE*2

RoHS

Application

 

 

DTR_PNP+MOS_Nch

Power    Manegement

EMF32

UMF32N

-50
30

-0.1

100～600

Yes

EMF33

-

-12
30

-0.5

140～

Yes

* No.1 Pin is  located on the lower left of equivalent circuite diagram for  VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
     * No.1 Pin is located on the lower right of equivalent  circuite diagram for SMT5 and SMT6 packages.
     "MOSFET" might cause chip aging and breakdown  under the large electrified environment. Please consider to design with ESD  protection circuit.

Complex  Bipolar Transistors[ DTR + Diode ] / [ Diode + DTR ]


         Configuration

Package

EMT5

(SC-107BB)

EMT6

(SC-107C)

VCEO(V)

IC(A)

hFE*2

RoHS

Application

 

DTR_PNP+Di

DC-DC    Converter

EML17

-50
30

0.1

68～

Yes

DTR_NPN+Di

DC-DC    Converter

EML20

50
30

0.1

80～

Yes

* No.1 Pin is  located on the lower left of equivalent circuite diagram for  VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
   * No.1 Pin is located on the lower right of equivalent  circuite diagram for SMT5 and SMT6 packages.

Complex  Digital Transistors[ DTR + DTR ] / [ DTR + DTR ]

Configuration

Package

EMT5
(SC-107BB)

EMT6
(SC-107C)

UMT5
(SC-88A)
<SOT-353>

UMT6
(SC-88)
<SOT-363>

SMT5
 (SC-74A)

SMT6
(SC-74)
<SOT-457>

TUMT6

TSMT6
(SC-95)

Eqivalent
element
transistors

VCC(VCEO)(V)

IO(IC)(A)

GI
(hFE)

RoHS

Application

 

 

 

 

 

Upper row:    Tr1
The

lower: Tr2

PNP+PNP

Potentionaldivider type

-

UMA9N

-

-

-

DTA114E×2

-50

-0.1

30～
-

Yes

-

UMA1N

-

-

-

DTA124E×2

-50

-0.1

56～
-

Yes

EMA2

UMA2N

-

-

-

DTA144E×2

-50

-0.1

68～
-

Yes

Leak asorption type

EMA5

UMA5N

-

-

-

DTA123J×2

-50

-0.1

80～
-

Yes

Potentional divider type

-

-

FMA9A

-

-

DTA114E×2

-50

-0.1

30～
-

Yes

-

-

FMA1A

-

-

DTA124E×2

-50

-0.1

56～
-

Yes

-

-

FMA2A

-

-

DTA144E×2

-50

-0.1

68～
-

Yes

Leak asorption type

-

-

FMA5A

-

-

DTA123J×2

-50

-0.1

80～
-

Yes

Input resistor type

EMA4

UMA4N

-

-

-

DTA114T×2

-50

-0.1

100～600
         -

Yes

EMA3

UMA3N

-

-

-

DTA143T×2

-50

-0.1

100～

600
-

Yes

Input resistor    type

-

-

FMA4A

-

-

DTA114T×2

-50

-0.1

100～

600
-

Yes

-

-

FMA3A

-

-

DTA143T×2

-50

-0.1

100～

600
-

Yes

Potentional divider type

EMB11

UMB11N

IMB11A

-

-

DTA114E×2

-50

-0.1

30～
-

Yes

EMB2

UMB2N

IMB2A

-

-

DTA144E×2

-50

-0.1

68～
-

Yes

Leak asorption type

EMB10

UMB10N

IMB10A

-

-

DTA123J×2

-50

-0.1

80～
-

Yes

Potentional divider type

EMB6

UMB6N

-

-

-

DTA144E×2

-50

-0.1

68～
-

Yes

Input resistor type

EMB4

-

-

-

-

DTA114T×2

-50

-0.1

100～

600
-

Yes

EMB3

UMB3N

IMB3A

-

-

DTA143T×2

-50

-0.1

100～

600
-

Yes

NPN+NPN

Potentional divider type

EMG9

UMG9N

-

-

-

DTC114E×2

50

0.1

30～
-

Yes

EMG5

UMG5N

-

-

-

DTC114Y×2

50

0.1

68～
-

Yes

EMG11

UMG11N

-

-

-

DTC123J×2

50

0.1

80～
-

Yes

EMG1

UMG1N

-

-

-

DTC124E×2

50

0.1

56～
-

Yes

EMG8

UMG8N

-

-

-

DTC143Z×2

50

0.1

80～
-

Yes

EMG2

UMG2N

-

-

-

DTC144E×2

50

0.1

68～
-

Yes

Potentional divider type

-

-

FMG9A

-

-

DTC114E×2

50

0.1

30～
-

Yes

-

-

FMG1A

-

-

DTC124E×2

50

0.1

56～
-

Yes

-

-

FMG2A

-

-

DTC144E×2

50

0.1

68～
-

Yes

Input resistor type

EMG4

UMG4N

-

-

-

DTC114T×2

50

0.1

100～

600
-

Yes

EMG3

UMG3N

-

-

-

DTC143T×2

50

0.1

100～

600
-

Yes

EMG6

UMG6N

-

-

-

DTC144T×2

50

0.1

100～600
-

Yes

Input resistor type

-

-

FMG4A

-

-

DTC114T×2

50

0.1

100～

600
-

Yes

-

-

FMG3A

-

-

DTC143T×2

50

0.1

100～

600
   -

Yes

-

-

FMG6A

-

-

DTC144T×2

50

0.1

100～

600
-

Yes

Potentional divider type

EMH11

UMH11N

IMH11A

-

-

DTC114E×2

50

0.1

30～
-

Yes

EMH1

UMH1N

IMH1A

-

-

DTC124E×2

50

0.1

56～
-

Yes

EMH25

-

-

-

-

DTC143Z×2

50

0.1

80～
-

Yes

EMH2

UMH2N

IMH2A

-

-

DTC144E×2

50

0.1

68～
-

Yes

Leak asorption type

EMH9

UMH9N

IMH9A

-

-

DTC114Y×2

50

0.1

68～
-

Yes

EMH10

UMH10N

-

-

-

DTC123J×2

50

0.1

80～
-

Yes

Potentional divider type

-

UMH5N

-

-

-

DTC124E×2

50

0.1

56～
-

Yes

EMH6

UMH6N

-

-

-

DTC144E×2

50

0.1

68～
-

Yes

Potentional divider type

-

-

IMH5A

-

-

DTC124E×2

50

0.1

56～
-

Yes

-

-

IMH6A

-

-

DTC144E×2

50

0.1

68～
-

Yes

Input resistor type

EMH4

UMH4N

IMH4A

-

-

DTC114T×2

50

0.1

100～

600
-

Yes

EMH3

UMH3N

IMH3A

-

-

DTC143T×2

50

0.1

100～

600
-

Yes

EMH15

-

IMH15A

-

-

DTC144T×2

50

0.1

100～

600
-

Yes

-

-

IMH21

-

-

DTC614T×2

20

0.6

820～2700

-

Yes

-

-

IMH23

US6H23

-

DTC643T×2

20

0.6

820～2700
-

Yes

Input resistor type

-

UMH8N

-

-

-

DTC114T×2

50

0.1

100～

600
-

Yes

-

UMH14N

-

-

-

DTC144T×2

50

0.1

100～

600
-

Yes

Input resistor type

-

-

IMH8A

-

-

DTC114T×2

50

0.1

100～

600
-

Yes

-

-

IMH14A

-

-

DTC144T×2

50

0.1

100～

600
-

Yes

Input resistor type

-

-

-

-

QSH29

DTDG14GP×2

60±10

0.5

500～
-

Yes

PNP+NPN

Potentional divider type

EMD3

UMD3N

-

-

-

DTA114E×DTC114E

50
-50

0.1
-0.1

30～
30～

Yes

EMD2

UMD2N

-

-

-

DTA124E×DTC124E

50

0.1

56～
-

Yes

EMD12

UMD12N

-

-

-

DTA144E×DTC144E

50
-50

0.1
-0.1

68～
68～

Yes

Leak asorption type

EMD38

-

-

-

-

DTA113Z×DTC114Y

50
-50

0.1
-0.1

68～
33～

Yes

EMD9

UMD9N

-

-

-

DTA114Y×DTC114Y

50
-50

0.1
-0.1

68～
68～

Yes

EMD4

UMD4N

-

-

-

DTA114Y×DTC144E

50
-50

0.1
-0.1

68～
68～

Yes

EMD5

UMD5N

-

-

-

DTA143X×DTC144E

50
-50

0.1
-0.1

68～
30～

Yes

EMD22

UMD22N

-

-

-

DTA143Z×DTC143Z

50
-50

0.1
-0.1

80～
80～

Yes

Potentional divider type

-

-

IMD3A

-

-

DTA114E×DTC114E

50
-50

0.1
-0.1

30～
30～

Yes

-

-

IMD2A

-

-

DTA124E×DTC124E

50
-50

0.1
-0.1

56～
56～

Yes

Leak asorption type

-

-

IMD90A

-

-

DTA114Y×DTC114Y

50
-50

0.1
-0.1

68～
68～

Yes

Input resistor type

EMD6

UMD6N

-

-

-

DTA143T×DTC143T

50
-50

0.1
-0.1

100～

600
～600

Yes

Input resistor type

-

-

IMD6A

-

-

DTA143T×DTC143T

50
-50

0.1
   -0.1

100～

600
～600

Yes

Power

management

EMD29

-

-

-

-

DTB513Z×DTC114E

-12
50

-0.5
0.1

140～
 30～

Yes

EMD30

-

-

-

-

DTB713Z×DTC114E

-30
50

0.2
0.1

140～
30～

Yes

Power    management

-

-

IMD10A

-

-

- ×DTC114T

-50
50

-0.5
0.1

68～
～600

Yes

-

-

IMD16A

-

-

- ×DTC115T

-50
50

-0.5
0.1

82～
～600

Yes

* No.1 Pin is located on the lower left of  equivalent circuite diagram for  VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
   * No.1 Pin is located on the lower right of equivalent  circuite diagram for SMT5 and SMT6 packages.

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